The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Jan. 16, 2009
Heui Jae Pahk, Seoul, KR;
Woo Jung Ahn, Gyeonggi-do, KR;
Seong Ryong Kim, Seoul, KR;
Jun Hyeok Lee, Seoul, KR;
Heui Jae Pahk, Seoul, KR;
Woo Jung Ahn, Gyeonggi-do, KR;
Seong Ryong Kim, Seoul, KR;
Jun Hyeok Lee, Seoul, KR;
Snu Precision Co., Ltd., Seoul, KR;
Abstract
Disclosed is a method of measuring thickness or a surface profile of a thin film layer formed on a base layer through a white light scanning interferometry, the method including: preparing simulation interference signals corresponding to thicknesses by assuming a plurality of sample thin film layers different in thickness from one another and simulating interference signals with respect to the respective sample thin film layers; acquiring a real interference signal with respect to an optical-axis direction of entering the thin film layer by illuminating the thin film layer with white light; preparing a plurality of estimated thicknesses that the thin film layer may have on the basis of the real interference signal; comparing whether the simulation interference signal having thickness corresponding to the estimated thickness is substantially matched with the real interference signal; and determining the thickness of the simulation interference signal substantially matched with the real interference signal as the thickness of the thin film layer.