The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Nov. 09, 2011
Ji Feng, Singapore, SG;
Duan-quan Liao, Singapore, SG;
Hai-long Gu, Singapore, SG;
Ying-tu Chen, Singapore, SG;
Ji Feng, Singapore, SG;
Duan-Quan Liao, Singapore, SG;
Hai-Long Gu, Singapore, SG;
Ying-Tu Chen, Singapore, SG;
United Microelectronics Corporation, Hsinchu, TW;
Abstract
A metal-insulator-metal (MIM) capacitor structure includes a first dielectric layer, a first damascene electrode layer, an insulating barrier layer, a second dielectric layer and a second damascene electrode layer. The first damascene electrode layer is formed in the first dielectric layer. The insulating barrier layer covers the first dielectric layer and the first damascene electrode layer, and is a single layer structure. The second dielectric layer is formed on the insulating barrier layer. The second damascene electrode layer is formed in the second dielectric layer and is contacted with the insulating barrier layer. The MIM capacitor structure can includes a dual damascene structure formed in the second dielectric layer and the insulating barrier layer and electrically connected to the first damascene electrode layer. A method for manufacturing the MIM capacitor structure is also provided.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile