The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Mar. 17, 2011
Gang Chen, San Jose, CA (US);
Sing-chung HU, San Jose, CA (US);
Duli Mao, Sunnyvale, CA (US);
Hsin-chih Tai, San Jose, CA (US);
Yin Qian, Milpitas, CA (US);
Vincent Venezia, Los Gatos, CA (US);
Rongsheng Yang, Palo Alto, CA (US);
Howard E. Rhodes, San Martin, CA (US);
Gang Chen, San Jose, CA (US);
Sing-Chung Hu, San Jose, CA (US);
Duli Mao, Sunnyvale, CA (US);
Hsin-Chih Tai, San Jose, CA (US);
Yin Qian, Milpitas, CA (US);
Vincent Venezia, Los Gatos, CA (US);
Rongsheng Yang, Palo Alto, CA (US);
Howard E. Rhodes, San Martin, CA (US);
OmniVision Technologies, Inc., Santa Clara, CA (US);
Abstract
Embodiments of a pixel including a photosensitive region formed in a surface of a substrate and an overflow drain formed in the surface of the substrate at a distance from the photosensitive area, an electrical bias of the overflow drain being variable and controllable. Embodiments of a pixel including a photosensitive region formed in a surface of a substrate, a source-follower transistor coupled to the photosensitive region, the source-follower transistor including a drain, and a doped bridge coupling the photosensitive region to the drain of the source-follower transistor.