The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Dec. 15, 2011
Huai-yu Cheng, White Plains, NY (US);
Hsiang-lan Lung, Ardsley, NY (US);
Simone Raoux, New York, NY (US);
Yen-hao Shih, Elmsford, NY (US);
Matthew J. Breitwisch, Pound Ridge, NY (US);
Huai-Yu Cheng, White Plains, NY (US);
Hsiang-Lan Lung, Ardsley, NY (US);
Simone Raoux, New York, NY (US);
Yen-Hao Shih, Elmsford, NY (US);
Matthew J. Breitwisch, Pound Ridge, NY (US);
Macronix International Co., Ltd., Hsinchu, TW;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A phase change material comprises GeSbTe, wherein a Ge atomic concentration x is within a range from 30% to 65%, a Sb atomic concentration y is within a range from 13% to 27% and a Te atomic concentration z is within a range from 20% to 45%. A Ge-rich family of such materials is also described. A memory device, suitable for integrated circuits, comprising such materials is described.