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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8946371 B1

PDFFull Text
Date of Patent:
Feb. 03, 2015

Filed:

Jan. 16, 2013

Photo-patternable dielectric materials curable to porous dielectric materials, formulations, precursors and methods of use thereof

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Phillip J. Brock, Sunnyvale, CA (US);

Blake W. Davis, Hollister, CA (US);

Qinghuang Lin, Yorktown Heights, NY (US);

Robert D. Miller, San Jose, CA (US);

Alshakim Nelson, Fremont, CA (US);

Jitendra S. Rathore, Campbell, CA (US);

Ratnam Sooriyakumaran, San Jose, CA (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorney:

Schmeiser, Olsen & Watts

Primary Examiner:

Kuo-Liang Peng

Int. Cl.
CPC ...
C08G 77/14 (2006.01); H01L 23/532 (2006.01); C07F 7/21 (2006.01); C08L 83/14 (2006.01); G03F 7/075 (2006.01); G03F 7/40 (2006.01); H01L 21/02 (2006.01); H01L 21/31 (2006.01); H01L 21/768 (2006.01); C08G 77/50 (2006.01); G03F 7/004 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5329 (2013.01); C07F 7/21 (2013.01); C08L 83/14 (2013.01); G03F 7/0757 (2013.01); G03F 7/40 (2013.01); H01L 21/02126 (2013.01); H01L 21/02137 (2013.01); H01L 21/02203 (2013.01); H01L 21/02282 (2013.01); H01L 21/31 (2013.01); H01L 21/76802 (2013.01); H01L 21/76808 (2013.01); H01L 21/76814 (2013.01); G03F 7/0755 (2013.01); C08G 77/50 (2013.01); G03F 7/0045 (2013.01);
Abstract

Silsesquioxane polymers that cure to porous silsesquioxane polymers, silsesquioxane polymers that cure to porous silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers that cure to porous silsesquioxane polymers, structures containing porous silsesquioxane polymers and monomers and method of preparing monomers for silsesquioxane polymers that cure to porous silsesquioxane polymers.

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