The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Jul. 02, 2008
Applicants:
Volker Becker, Marxzell, DE;
Franz Laermer, Weil der Stadt, DE;
Tino Fuchs, Tuebingen, DE;
Christina Leinenbach, Ensdorf, DE;
Inventors:
Volker Becker, Marxzell, DE;
Franz Laermer, Weil der Stadt, DE;
Tino Fuchs, Tuebingen, DE;
Christina Leinenbach, Ensdorf, DE;
Assignee:
Robert Bosch GmbH, Stuttgart, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/3065 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01); B81C 1/00 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/30621 (2013.01); H01L 21/02019 (2013.01); B81C 1/00531 (2013.01); B81C 1/00595 (2013.01); H01L 21/32135 (2013.01); B81C 2201/0132 (2013.01); B81C 2201/0138 (2013.01);
Abstract
A method for selective etching of an SiGe mixed semiconductor layer on a silicon semiconductor substrate by dry chemical etching of the SiGe mixed semiconductor layer with the aid of an etching gas selected from the group including ClFand/or ClF, a gas selected from the group including Cland/or HCl being added to the etching gas.