The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Oct. 31, 2011
Applicant:
Heinrich Koerner, Bruckmeuhl, DE;
Inventor:
Heinrich Koerner, Bruckmeuhl, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 23/48 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53252 (2013.01); H01L 21/76826 (2013.01); H01L 21/76807 (2013.01); H01L 21/28512 (2013.01); H01L 21/76843 (2013.01); H01L 21/76846 (2013.01); H01L 21/76873 (2013.01); H01L 23/485 (2013.01); H01L 23/53238 (2013.01);
Abstract
A method of forming a semiconductor device, comprising: providing a Si-containing layer; forming a barrier layer over said Si-containing layer, said barrier layer comprising a compound including a metallic element; forming a metallic nucleation_seed layer over said barrier layer, said nucleation_seed layer including said metallic element; and forming a metallic interconnect layer over said nucleation_seed layer, wherein said barrier layer and said nucleation_seed layer are formed without exposing said semiconductor device to the ambient atmosphere.