The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Aug. 28, 2012
Blake Darby, Gainesville, FL (US);
Ludovic Godet, Boston, MA (US);
Xianfeng LU, Chandler, AZ (US);
Varian Semiconductor Equiptment Associates, Inc., Gloucester, MA (US);
Abstract
In one embodiment, a method of producing a porous semiconductor film on a workpiece includes generating semiconductor precursor ions that comprise one or more of: germanium precursor ions and silicon precursor ions in a plasma of a plasma chamber, in which the semiconductor precursor ions are operative to form a porous film on the workpiece. The method further includes directing the semiconductor precursor ions to the workpiece over a range of angles.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile