The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Feb. 11, 2014
Nxp B.v., Eindhoven, NL;
Evelyne Gridelet, Omal, BE;
Johannes Josephus Theodorus Marinus Donkers, Valkenswaard, NL;
Tony Vanhoucke, Bierbeek, BE;
Petrus Hubertus Cornelis Magnee, Malden, NL;
Hans Mertens, Leuven, BE;
Blandine Duriez, Brussels, BE;
NXP, B.V., Eindhoven, NL;
Abstract
Disclosed is a method of manufacturing a bipolar transistor, comprising providing a substrate () comprising a first isolation region () separated from a second isolation region by an active region () comprising a collector impurity; forming a layer stack over said substrate, said layer stack comprising a base layer ('), a silicon capping layer () over said base layer and a silicon-germanium (SiGe) base contact layer () over said silicon capping layer; etching the SiGe base contact layer to form an emitter window () over the collector impurity, wherein the silicon emitter cap layer is used as etch stop layer; forming sidewall spacers () in the emitter window; and filling the emitter window with an emitter material (). A bipolar transistor manufactured in accordance with this method and an IC comprising one or more of such bipolar transistors are also disclosed.