The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2015

Filed:

Aug. 12, 2013
Applicant:

Asml Netherlands B.v., Veldhoven, NL;

Inventors:

Tsann-Bim Chiou, Hsinchu, TW;

Mircea Dusa, Wezembeek-Oppem, BE;

Alek Chi-Heng Chen, New Taipei, TW;

Assignee:

ASML Netherlands B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/22 (2012.01); G03F 1/68 (2012.01); G03F 7/26 (2006.01); G06F 17/50 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 1/22 (2013.01); G06F 17/5068 (2013.01); G03F 1/68 (2013.01); G03F 7/70433 (2013.01); G03F 7/70466 (2013.01);
Abstract

In a multiple patterning techniques, where two or more exposures are used to form a single layer of a device, the splitting of features in a single layer between the multiple exposures is carried out additionally with reference to features of another associated layer and the splitting of that layer into two or more sets of features for separate exposure. The multiple exposure process can be a process involving repeated litho-etch steps desirably, the alignment scheme utilized during exposure of the split layers is optimized with reference to the splitting approach.


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