The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Nov. 16, 2012
Applicants:
Fei-fan Chen, Hsinchu, TW;
Wen-sheng Wu, Hsinchu, TW;
Chien Kuo Huang, Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/448 (2006.01); C23C 16/452 (2006.01); C23F 1/00 (2006.01); H01L 21/306 (2006.01); H01L 21/465 (2006.01); H01L 21/02 (2006.01); H05H 1/46 (2006.01); H01J 37/32 (2006.01); C23C 16/06 (2006.01); C23C 16/22 (2006.01);
U.S. Cl.
CPC ...
H01L 21/465 (2013.01); H01L 21/02263 (2013.01); H05H 1/46 (2013.01); H01J 37/32357 (2013.01); H01J 37/3244 (2013.01); H01J 37/32477 (2013.01); H05H 2001/4667 (2013.01);
Abstract
A system and method for generating and using plasma is provided. An embodiment comprises a plasma generating unit that comprises beta-phase aluminum oxide. A precursor material is introduced to the plasma generating unit and a plasma is induced from the precursor material. The plasma may be used to deposit or etch materials on a semiconductor substrate.