The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2015

Filed:

Aug. 09, 2012
Applicant:

Guangjun Yang, Shanghai, CN;

Inventor:

Guangjun Yang, Shanghai, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/24 (2006.01); G11C 16/04 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/24 (2013.01); G11C 16/0425 (2013.01); G11C 16/3418 (2013.01);
Abstract

A flash memory device is provided. The flash memory device includes a memory cell array and a pre-charge unit. The pre-charge unit, coupled to a plurality of bit lines corresponding with the memory cell array, pre-charges the bit lines to a predetermined voltage during a pre-charge stage. The pre-charge unit includes a voltage stabilizing unit to provide a constant current to the bit lines. Due to the voltage stabilizing unit, in a programming process, the voltage applied to the bit lines which are not related with programming may not drop as a result of current leakage. Therefore, the memory cells except the memory cell to be programmed are kept in cut off state, without a current passing. As a result, interference with the memory cells which are not to be programmed may be effectively avoided and the accuracy of programming may be improved.


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