The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Oct. 14, 2011
Yimao Cai, Beijing, CN;
RU Huang, Beijing, CN;
Shiqiang Qin, Beijing, CN;
Poren Tang, Beijing, CN;
Yu Tang, Beijing, CN;
Shenghu Tan, Beijing, CN;
Xin Huang, Beijing, CN;
Yue Pan, Beijing, CN;
Yimao Cai, Beijing, CN;
Ru Huang, Beijing, CN;
Shiqiang Qin, Beijing, CN;
Poren Tang, Beijing, CN;
Yu Tang, Beijing, CN;
Shenghu Tan, Beijing, CN;
Xin Huang, Beijing, CN;
Yue Pan, Beijing, CN;
Peking University, Beijing, CN;
Abstract
The present invention discloses a method for achieving four-bit storage by using a flash memory having a splitting trench gate. The flash memory with the splitting trench gate is disclosed in a Chinese patent No. 200710105964.2. At one side that each of two trenches is contacted with a channel, a programming for electrons is achieved by using a channel hot electron injection method; and at the other side that each of the two trenches is contacted with a source or a drain, a programming for electrons is achieved by using an FN injection method, so that a function of a four-bit storage of the device is achieved by changing a programming mode. Thus, a performance of the device is improved while a storage density is greatly increased.