The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Jul. 10, 2013
Industrial Technology Research Institute, Chutung, Hsinchu, TW;
Ching-Hao Chuang, Huatan Township, TW;
Meng-Fan Chang, Taichung, TW;
Shyh-Shyuan Sheu, Taipei, TW;
Zhe-Hui Lin, Fuxing Township, TW;
Industrial Technology Research Institute, Chutung, Hsinchu, TW;
Abstract
A memory storage circuit includes a volatile memory portion, a control portion, and a non-volatile memory portion. The volatile memory portion includes a first node and a second node to store a pair of complementary logic data. The control portion includes a first transistor and a second transistor. Gate electrodes of the first and second transistors are coupled to receive a store signal, and first electrodes of the first and second transistors are coupled to receive a control signal. The non-volatile memory portion includes a first resistive memory element and a second resistive memory element to store the pair of complementary logic data. The first resistive memory element is coupled between a second electrode of the first transistor and the first node, and the second resistive memory element is coupled between a second electrode of the second transistor and the second node.