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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8941174 B1

PDFFull Text
Expired
Date of Patent:
Jan. 27, 2015

Filed:

Oct. 17, 2011

Semiconductor device and method for producing the same

Applicants:

Masaya Okada, Osaka, JP;

Makoto Kiyama, Itami, JP;

Yu Saitoh, Itami, JP;

Seiji Yaegashi, Tokyo, JP;

Mitsunori Yokoyama, Tokyo, JP;

Kazutaka Inoue, Yokohama, JP;

Inventors:

Masaya Okada, Osaka, JP;

Makoto Kiyama, Itami, JP;

Yu Saitoh, Itami, JP;

Seiji Yaegashi, Tokyo, JP;

Mitsunori Yokoyama, Tokyo, JP;

Kazutaka Inoue, Yokohama, JP;

Assignee:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Attorneys:

Venable LLP

Michael A. Sartori

Tamatane J. Aga

Primary Examiner:

Timor Karimy

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/66462 (2013.01); H01L 29/7788 (2013.01); H01L 29/7789 (2013.01); H01L 29/66734 (2013.01); H01L 29/2003 (2013.01); H01L 29/41766 (2013.01); H01L 29/42368 (2013.01); H01L 29/78 (2013.01);
Abstract

It is an object to improve the breakdown voltage characteristics of a vertical semiconductor device having an opening and including a channel formed of two-dimensional electron gas in the opening. A GaN-based stacked layerincludes n-type GaN drift layer/p-type GaN barrier layer/n-type GaN contact layer. An openingextends from a top layer and reaches the n-type GaN drift layer. The semiconductor device includes a regrown layerlocated so as to cover a wall surface and a bottom portion of the opening, the regrown layerincluding an electron drift layerand an electron source layer, a source electrode S located around the opening, a gate electrode G located on the regrown layer in the opening, and a bottom insulating layerlocated in the bottom portion of the opening.

Find Patent Forward Citations

Okada, Masaya. (2015). Semiconductor device and method for producing the same (U.S. Patent No. 8941174). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8941174

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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