The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Dec. 15, 2011
Applicants:
Alexei Koudymov, Troy, NY (US);
Jamal Ramdani, Raritan, NJ (US);
Kierthi Swaminathan, Highland Park, NJ (US);
Inventors:
Alexei Koudymov, Troy, NY (US);
Jamal Ramdani, Raritan, NJ (US);
Kierthi Swaminathan, Highland Park, NJ (US);
Assignee:
Power Integrations, Inc., San Jose, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A composite wafer includes a first substrate having a first vertical thickness and a top surface, the top surface being prepared in a state for subsequent semiconductor material epitaxial deposition. A carrier substrate is disposed beneath the first substrate. The carrier substrate has a second vertical thickness greater than the first vertical thickness. An interlayer bonds the first substrate to the carrier substrate.