The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Jul. 06, 2012
Misato Sakamoto, Kanagawa, JP;
Youichi Yamamoto, Kanagawa, JP;
Masayuki Tachikawa, Kanagawa, JP;
Yoshitake Kato, Kanagawa, JP;
Misato Sakamoto, Kanagawa, JP;
Youichi Yamamoto, Kanagawa, JP;
Masayuki Tachikawa, Kanagawa, JP;
Yoshitake Kato, Kanagawa, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
A manufacturing method of a semiconductor device includes the following steps. Firstly, a lower electrode is formed over a substrate (semiconductor substrate). Successively, the lower electrode is primarily crystallized. Successively, a capacitance dielectric layer is formed over the lower electrode after primarily crystallized. Successively, the capacitance dielectric layer is secondarily crystallized. Then, an upper electrode is formed over the capacitance dielectric layer.