The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2015

Filed:

Jun. 03, 2014
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chun-Wei Hsu, Taipei, TW;

Po-Cheng Huang, Kaohsiung, TW;

Ren-Peng Huang, Changhua County, TW;

Jie-Ning Yang, Pingtung County, TW;

Chia-Lin Hsu, Tainan, TW;

Teng-Chun Tsai, Tainan, TW;

Chih-Hsun Lin, Ping-Tung County, TW;

Chang-Hung Kung, Kaohsiung, TW;

Yen-Ming Chen, New Taipei, TW;

Yu-Ting Li, Chiayi, TW;

Assignee:

United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01);
Abstract

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation (STI) on the resistor region of the substrate; forming a tank in the STI; and forming a resistor in the tank and on two sides of the top surface of the STI outside the tank.


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