The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Mar. 18, 2014
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Takashi Ando, Tuckahoe, NY (US);
Changhwan Choi, Seoul, KR;
Unoh Kwon, Fishkill, NY (US);
Vijay Narayanan, New York, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823842 (2013.01); H01L 21/02164 (2013.01); H01L 21/02697 (2013.01); H01L 21/823857 (2013.01); H01L 21/28229 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01);
Abstract
A field effect transistor device includes a first gate stack portion including a dielectric layer disposed on a substrate, a first TiN layer disposed on the dielectric layer, a metallic layer disposed on the dielectric layer, and a second TiN layer disposed on the metallic layer, a first source region disposed adjacent to the first gate stack portion, and a first drain region disposed adjacent to the first gate stack portion.