The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Aug. 29, 2011
Applicants:
Walter Haeckl, Zeilarn, DE;
Karl Hesse, Burghausen, DE;
Wilhelm Hoebold, Emmerting, DE;
Reinhard Wolf, Emmerting, DE;
Inventors:
Walter Haeckl, Zeilarn, DE;
Karl Hesse, Burghausen, DE;
Wilhelm Hoebold, Emmerting, DE;
Reinhard Wolf, Emmerting, DE;
Assignee:
Wacker Chemie AG, Munich, DE;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 33/02 (2006.01); C01B 33/027 (2006.01); C01B 33/035 (2006.01); B01J 8/18 (2006.01);
U.S. Cl.
CPC ...
C01B 33/02 (2013.01); C01B 33/027 (2013.01); C01B 33/035 (2013.01); B01J 8/1818 (2013.01); B01J 8/18 (2013.01); B01J 8/1827 (2013.01);
Abstract
The invention provides a process for producing polycrystalline silicon, by introducing reaction gases containing a silicon-containing component and hydrogen into reactors to deposit silicon, wherein a purified condensate from a first deposition process in a first reactor is supplied to a second reactor, and is used in a second deposition process in that second reactor.