The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2015
Filed:
Feb. 17, 2011
Suk Pil Kim, Yongin-si, KR;
Yoon Dong Park, Yongin-si, KR;
Dong Seok Suh, Hwaseong-si, KR;
Young Gu Jin, Osan-si, KR;
Seung Hoon Lee, Yongin-si, KR;
Suk Pil Kim, Yongin-si, KR;
Yoon Dong Park, Yongin-si, KR;
Dong Seok Suh, Hwaseong-si, KR;
Young Gu Jin, Osan-si, KR;
Seung Hoon Lee, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A sensor, including a plurality of photo gate pairs on a semiconductor substrate, each of the photo gate pairs including a first photo gate and a second photo gate, a first shared floating diffusion region in the semiconductor substrate, and a plurality of first transmission transistors on the semiconductor substrate, wherein each of the plurality of first transmission transistors is adapted to transmit charges to the first shared floating diffusion region in response to a first transmission control signal, the charges being generated in the semiconductor substrate under the first photo gate of each of the plurality of photo gate pairs.