The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2015

Filed:

Dec. 27, 2012
Applicant:

Industrial Technology Research Institute, Hsinchu, TW;

Inventors:

Chun-Ting Chen, Bade, TW;

Li-Wen Lai, Taichung, TW;

Kun-Wei Lin, Tainan, TW;

Teng-Yen Wang, Beigang Township, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 51/00 (2006.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3135 (2013.01); H01L 21/56 (2013.01); H01L 51/0097 (2013.01); H01L 51/5256 (2013.01); H01L 2924/0002 (2013.01); H01L 23/3192 (2013.01);
Abstract

An embodiment of the invention provides a compound barrier layer, including: a first barrier layer disposed on a substrate; and a second barrier layer disposed on the first barrier layer, wherein the first barrier layer and second barrier layer both include a plurality of alternately arranged inorganic material regions and organo-silicon material regions and the inorganic material regions and the organo-silicon material regions of the first barrier layer and second barrier layer are alternatively stacked vertically.


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