The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2015
Filed:
Mar. 12, 2013
Jun Utsumi, Kanagawa, JP;
Takayuki Goto, Kanagawa, JP;
Kensuke Ide, Shiga, JP;
Hideki Takagi, Ibaraki, JP;
Masahiro Funayama, Kanagawa, JP;
Jun Utsumi, Kanagawa, JP;
Takayuki Goto, Kanagawa, JP;
Kensuke Ide, Shiga, JP;
Hideki Takagi, Ibaraki, JP;
Masahiro Funayama, Kanagawa, JP;
Mitsubishi Heavy Industries, Ltd., Tokyo, JP;
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Abstract
A device is provided with: a first substrate mainly containing silicon dioxide; a second substrate mainly containing silicon, compound semiconductor, silicon dioxide or fluoride; and a bonding functional intermediate layer arranged between the first substrate and the second substrate. The first substrate is bonded to the second substrate thorough room temperature bonding in which a sputtered first surface of the first substrate is contacted with a sputtered second surface of the second substrate via the bonding functional intermediate layer. Here, the material of the bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate and different from the main component of the second substrate.