The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2015

Filed:

Mar. 18, 2011
Applicants:

Xiying Costa, San Jose, CA (US);

Yibo Nian, Sunnyvale, CA (US);

Roy Scheuerlein, Cupertino, CA (US);

Tz-yi Liu, Palo Alto, CA (US);

Chandrasekhar Reddy Gorla, Sunnyvale, CA (US);

Inventors:

Xiying Costa, San Jose, CA (US);

Yibo Nian, Sunnyvale, CA (US);

Roy Scheuerlein, Cupertino, CA (US);

Tz-Yi Liu, Palo Alto, CA (US);

Chandrasekhar Reddy Gorla, Sunnyvale, CA (US);

Assignee:

SanDisk 3D LLC, Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 11/56 (2013.01); G11C 11/5664 (2013.01); G11C 11/5678 (2013.01); G11C 11/5685 (2013.01); G11C 13/0007 (2013.01); G11C 13/0064 (2013.01); G11C 2013/0071 (2013.01); G11C 2013/0073 (2013.01); G11C 2013/0076 (2013.01); G11C 2013/0092 (2013.01); G11C 2213/32 (2013.01);
Abstract

Improved methods for programming multi-level metal oxide memory cells balance applied voltage and current to provide improved performance. Set programming, which transitions the memory cell to a lower resistance state, is accomplished by determining an appropriate programming voltage and current limit for the objective resistance state to be achieved in the programming and then applying a pulse having the determined set electrical characteristics. Reset programming, which transitions the memory cell to a higher resistance state, is accomplished by determining an appropriate programming voltage and optionally current limit for the state to be achieved in the programming and then applying a pulse having the determined electrical characteristics. The algorithm used to determine the appropriate set or reset programming voltage and current values provides for effective programming without stressing the memory element. The electrical characteristics for programming pulses may be stored in a data table used in a table look up algorithm.


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