The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2015
Filed:
Jun. 10, 2014
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventor:
Lo Yueh Lin, Yilan County, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 29/423 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42356 (2013.01); H01L 27/11551 (2013.01); H01L 27/11578 (2013.01);
Abstract
Substantially simultaneous plasma etching of polysilicon and oxide layers in multilayer lines in semiconductors allows for enhanced critical dimensions and aspect ratios of the multilayer lines. Increasing multilayer line aspect ratios may be possible, allowing for increased efficiency, greater storage capacity, and smaller critical dimensions in semiconductor technologies.