The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2015
Filed:
Jan. 22, 2009
Hsiang-lan Lung, Elmsford, NY (US);
Erh-kun Lai, Elmsford, NY (US);
Chung H. Lam, Peekskill, NY (US);
Bipin Rajendran, White Plains, NY (US);
Hsiang-Lan Lung, Elmsford, NY (US);
Erh-Kun Lai, Elmsford, NY (US);
Chung H. Lam, Peekskill, NY (US);
Bipin Rajendran, White Plains, NY (US);
Macronix International Co., Ltd., Hsinchu, TW;
International Business Machines Corporation, Armonk, NY (US);
Abstract
Memory cells having memory elements self-aligned with the emitters of bipolar junction transistor access devices are described herein, as well as methods for manufacturing such devices. A memory device as described herein comprises a plurality of memory cells. Memory cells in the plurality of memory cells include a bipolar junction transistor comprising an emitter comprising a pillar of doped polysilicon. The memory cells include an insulating element over the emitter and having an opening extending through the insulating layer, the opening centered over the emitter. The memory cells also include a memory element within the opening and electrically coupled to the emitter.