The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2015
Filed:
Jan. 25, 2013
Hitachi, Ltd., Tokyo, JP;
Kiyohiko Sato, Ome, JP;
Ryohei Maeno, Toyama, JP;
Tsuyoshi Fujiwara, Hamura, JP;
Akira Otaguro, Ome, JP;
Yukino Ishii, Hamura, JP;
Kiyomi Katsuyama, Iruma, JP;
Hidenori Sato, Ome, JP;
Daichi Matsumoto, Hamura, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The orientation polarization (positive and negative) of the Si—N bonds and the Si—O bonds is canceled, thereby enabling to minimize the polarization in a capacitive insulating film. As a result, a silicon oxynitride film with a small voltage secondary coefficient is formed, and is applied as a capacitive insulating film for use in a MIM capacitor. Specifically, the refractive index 'n' of the silicon oxynitride film satisfies 1.47≦n≦1.53, for light with a wavelength of 633 nm.