The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2015
Filed:
Dec. 27, 2013
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 29/66681 (2013.01); H01L 21/823412 (2013.01); H01L 21/823418 (2013.10); H01L 21/823456 (2013.01);
Abstract
An integrated circuit containing a MOS transistor and a DEMOS transistor of a same polarity may be formed by implanting dopants of a same conductivity type as source/drain regions of the MOS transistor and the DEMOS transistor through a gate of the MOS transistor and through a gate of the DEMOS transistor. The implanted dopants are blocked from a drain-side edge of the DEMOS transistor gate. The implanted dopants form a drain enhancement region under the DEMOS transistor gate in a drift region of an extended drain of the DEMOS transistor.