The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2015
Filed:
Dec. 09, 2011
Junya Ishizaki, Annaka, JP;
Junya Ishizaki, Annaka, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
The present invention provides a light-emitting device manufactured with use of a compound semiconductor substrate comprising at least: a p-type cladding layer; a multiple-active layer portion in which three or more active layers made of (AlGa)InP (0≦x≦0.6, 0.4≦y≦0.6) and two or more barrier layers having a higher Al content rate x than the active layers are alternately laminated; and an n-type cladding layer, wherein the barrier layer on a side close to the p-type cladding layer has a smaller band gap than that of the barrier layer on a side close to the n-type cladding layer in the barrier layers, and the compound semiconductor substrate has a superlattice barrier layer between the multiple-active layer portion and the n-type cladding layer or in the n-type cladding layer. As a result, the light-emitting device having long life duration, low resistance, and high light-emitting efficiency (especially internal quantum efficiency) can be provided.