The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2015
Filed:
Nov. 08, 2013
National Chiao Tung University, Hsinchu, TW;
Horng-Chih Lin, Hsinchu, TW;
Rong-Jhe Lyu, Taichung, TW;
National Chiao Tung University, Hsinchu, TW;
Abstract
A method for fabricating a thin-film transistor is disclosed. Firstly, a patterned dielectric mask structure with a bottom thereof having a gate dielectric layer is formed on a gate-stacked structure so that the gate dielectric layer covers a gate of the gate-stacked structure. Top surface of the patterned dielectric mask structure has at least two openings. A semiconductor layer is formed on the gate-stacked structure via the openings by a sputtering method. The semiconductor layer comprises a channel above the gate, a source and a drain below the openings. The channel has a thickness which sequentially decreases from edge to center.