The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2015
Filed:
Aug. 24, 2011
Tsun-kai Tsao, Yongkang, TW;
Ming-huei Shen, Dounan Town, TW;
Shih-chang Liu, Alian Township, Kaohsiung County, TW;
Yeur-luen Tu, Taichung, TW;
Chia-shiung Tsai, Hsin-Chu, TW;
Tsun-Kai Tsao, Yongkang, TW;
Ming-Huei Shen, Dounan Town, TW;
Shih-Chang Liu, Alian Township, Kaohsiung County, TW;
Yeur-Luen Tu, Taichung, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A fine pitch phase change random access memory ('PCRAM') design and method of fabricating same are disclosed. One embodiment is a phase change memory ('PCM') cell comprising a spacer defining a rectangular reaction area and a phase change material layer disposed within the reaction area. The PCM cell further comprises a protection layer disposed over the GST film layer and within the area defined by the spacer; and a capping layer disposed over the protection layer and the spacer.