The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2015

Filed:

Nov. 10, 2011
Applicants:

Kuang-jung Chen, Poughkeepsie, NY (US);

Wu-song S. Huang, Brewster, NY (US);

Sen Liu, Highland Park, NJ (US);

Steven J. Holmes, Guilderland, NY (US);

Gregory Breyta, San Jose, CA (US);

Inventors:

Kuang-Jung Chen, Poughkeepsie, NY (US);

Wu-Song S. Huang, Brewster, NY (US);

Sen Liu, Highland Park, NJ (US);

Steven J. Holmes, Guilderland, NY (US);

Gregory Breyta, San Jose, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/20 (2006.01); G03F 7/028 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); G03F 7/095 (2006.01);
U.S. Cl.
CPC ...
G03F 7/203 (2013.01); G03F 7/028 (2013.01); G03F 7/0045 (2013.01); G03F 7/0382 (2013.01); G03F 7/0392 (2013.01); G03F 7/095 (2013.01); Y10S 430/114 (2013.01); Y10S 430/128 (2013.01);
Abstract

The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions.


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