The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2015

Filed:

Dec. 28, 2011
Applicants:

Masaki Nakaya, Chuo-ku, JP;

Midori Takiguchi, Chuo-ku, JP;

Mari Shimizu, Chuo-ku, JP;

Aiko Sato, Chuo-ku, JP;

Hiroyasu Tabuchi, Chuo-ku, JP;

Eitaro Matsui, Chuo-ku, JP;

Inventors:

Masaki Nakaya, Chuo-ku, JP;

Midori Takiguchi, Chuo-ku, JP;

Mari Shimizu, Chuo-ku, JP;

Aiko Sato, Chuo-ku, JP;

Hiroyasu Tabuchi, Chuo-ku, JP;

Eitaro Matsui, Chuo-ku, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C09D 5/00 (2006.01); C23C 16/04 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
C09D 5/00 (2013.01); C23C 16/045 (2013.01); C23C 16/401 (2013.01);
Abstract

Provided is a method for producing a gas barrier plastic molded body by forming a gas barrier thin film which is substantially colorless and has gas barrier properties, on the surface of a plastic molded body by a heating element CVD method using only raw material gases that are highly safe. The method for producing a gas barrier plastic molded body according to the present invention is a method for producing a gas barrier plastic molded body () by forming a gas barrier thin film () on the surface of a plastic molded body (), the method comprising: a film-forming process in which the gas barrier thin film () is formed on the surface of the plastic molded body by a heating element CVD method, using an organosilane-based compound represented by formula (Chemical Formula 1) as a main raw material gas, using an oxidizing gas as an additive gas, and using a heating element containing tantalum (Ta) as a main constituent element:HSi—Cn—X  (Chemical Formula 1)wherein in Chemical Formula 1, n represents 2 or 3; and X represents SiH, H, or NH.


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