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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8932438 B1

PDFFull Text
Date of Patent:
Jan. 13, 2015

Filed:

Dec. 20, 2010

Method of manufacturing magnetoresistive element, sputter deposition chamber, apparatus for manufacturing magnetoresistive element having sputter deposition chamber, program and storage medium

Applicants:

Koji Tsunekawa, Tokyo, JP;

Hiroyuki Hosoya, Tama, JP;

Yoshinori Nagamine, Tama, JP;

Shinji Furukawa, Cupertino, CA (US);

Naoki Watanabe, Kawasaki, JP;

Inventors:

Koji Tsunekawa, Tokyo, JP;

Hiroyuki Hosoya, Tama, JP;

Yoshinori Nagamine, Tama, JP;

Shinji Furukawa, Cupertino, CA (US);

Naoki Watanabe, Kawasaki, JP;

Assignee:

Canon Anelva Corporation, Kanagawa-Ken, JP;

Attorney:

Buchanan Ingersoll & Rooney PC

Primary Examiner:

Rodney McDonald

Int. Cl.
CPC ...
C23C 14/34 (2006.01); G11B 5/39 (2006.01); B82Y 10/00 (2011.01); B82Y 25/00 (2011.01); B82Y 40/00 (2011.01); C23C 14/14 (2006.01); C23C 14/22 (2006.01); G01R 33/09 (2006.01); H01F 10/32 (2006.01); H01F 41/18 (2006.01); H01F 41/30 (2006.01); H01L 43/12 (2006.01); G11B 5/31 (2006.01);
U.S. Cl.
CPC ...
G11B 5/3909 (2013.01); B82Y 10/00 (2013.01); B82Y 25/00 (2013.01); B82Y 40/00 (2013.01); C23C 14/14 (2013.01); C23C 14/225 (2013.01); C23C 14/3464 (2013.01); G01R 33/093 (2013.01); G01R 33/098 (2013.01); G11B 5/3903 (2013.01); H01F 10/3254 (2013.01); H01F 10/3272 (2013.01); H01F 41/18 (2013.01); H01F 41/302 (2013.01); H01L 43/12 (2013.01); G11B 5/3163 (2013.01); G11B 2005/3996 (2013.01); H01F 10/325 (2013.01);
Abstract

The magnetic anisotropy of a magnetic layer in a spin valve tunnel magnetoresistive element or giant magnetoresistive element is enhanced. Deposition of the magnetic layer is performed by making sputtering particles obliquely incident on a substrate from a certain incident direction at a certain incident angle.

Find Patent Forward Citations

Tsunekawa, Koji. (2015). Method of manufacturing magnetoresistive element, sputter deposition chamber, apparatus for manufacturing magnetoresistive element having sputter deposition chamber, program and storage medium (U.S. Patent No. 8932438). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8932438

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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