The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Nov. 30, 2011
Nai-ping Kuo, Hsinchu, TW;
Su-chueh Lo, Hsinchu, TW;
Kuen-long Chang, Taipei, TW;
Chun-hsiung Hung, Hsinchu, TW;
Chia-feng Cheng, Changhua, TW;
Ken-hui Chen, Hsinchu, TW;
Yu-chen Wang, Kaohsiung, TW;
Nai-Ping Kuo, Hsinchu, TW;
Su-Chueh Lo, Hsinchu, TW;
Kuen-Long Chang, Taipei, TW;
Chun-Hsiung Hung, Hsinchu, TW;
Chia-Feng Cheng, Changhua, TW;
Ken-Hui Chen, Hsinchu, TW;
Yu-Chen Wang, Kaohsiung, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
Techniques are described herein for detecting and recovering over-erased memory cells in a flash memory device. In one embodiment, a flash memory device is described including a memory array including a plurality of blocks of memory cells. The device also includes a controller to perform a leakage-suppression process. The leakage-suppression process includes determining that a given block of memory cells includes one or more over-erased memory cells. Upon the determination, the leakage-suppression process also includes performing a soft program operation to increase the threshold voltage of the over-erased memory cells in the given block.