The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Mar. 30, 2012
Applicants:
Lin Cheng, Starkville, MS (US);
Michael Mazzola, Starkville, MS (US);
Inventors:
Lin Cheng, Starkville, MS (US);
Michael Mazzola, Starkville, MS (US);
Assignee:
Power Integrations, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/36 (2006.01); H01L 29/872 (2006.01); H01L 29/808 (2006.01); H01L 29/868 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8083 (2013.01); H01L 29/36 (2013.01); H01L 29/872 (2013.01); H01L 29/868 (2013.01); H01L 29/66068 (2013.01); H01L 29/6606 (2013.01); H01L 29/1066 (2013.01); H01L 29/1608 (2013.01);
Abstract
Semiconductor devices and methods of making the devices are described. The devices can be junction field-effect transistors (JFETs) or diodes such as junction barrier Schottky (JBS) diodes or PiN diodes. The devices have graded p-type semiconductor layers and/or regions formed by epitaxial growth. The methods do not require ion implantation. The devices can be made from a wide-bandgap semiconductor material such as silicon carbide (SiC) and can be used in high temperature and high power applications.