The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2015

Filed:

Nov. 30, 2012
Applicant:

Panasonic Corporation, Osaka, JP;

Inventors:

Masato Oooka, Toyama, JP;

Osamu Matsui, Toyama, JP;

Shuji Tsujino, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/088 (2006.01); H01L 27/06 (2006.01); H01L 27/098 (2006.01); H01L 29/06 (2006.01); H01L 29/732 (2006.01); H01L 29/808 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 27/0623 (2013.01); H01L 27/098 (2013.01); H01L 29/0692 (2013.01); H01L 29/66272 (2013.01); H01L 29/66901 (2013.01); H01L 29/7322 (2013.01); H01L 29/808 (2013.01);
Abstract

A channel region having a first conductivity type is disposed in a surface portion of a semiconductor substrate. A gate region having a second conductivity type is disposed in a surface portion of the channel region. A first semiconductor region having the second conductivity type is disposed under the channel region. Source/drain regions having the first conductivity type are disposed in parts of the surface portion of the channel region on both sides of the gate region in a channel length direction. Second semiconductor regions each having a high impurity concentration and the second conductivity type are disposed in parts of the semiconductor substrate on both sides of the channel region in a channel width direction.


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