The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Mar. 12, 2009
Ming-daou Lee, Hsinchu, TW;
Chia-hua Ho, Hsinchu, TW;
Erh-kun Lai, Hsinchu, TW;
Kuang-yeu Hsieh, Hsinchu, TW;
Ming-Daou Lee, Hsinchu, TW;
Chia-Hua Ho, Hsinchu, TW;
Erh-Kun Lai, Hsinchu, TW;
Kuang-Yeu Hsieh, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A resistance type memory device is provided. The resistance type memory device includes a first and a second conductors and a metal oxide layer. The metal oxide layer is disposed between the first and the second conductors, and the resistance type memory device is defined in a first resistivity. The resistance type memory device is defined in a second resistivity after a first pulse voltage is applied to the metal oxide layer. The resistance type memory device is defined in a third resistivity after a second pulse voltage is applied to the metal oxide layer. The second resistivity is greater than the first resistivity, and the first resistivity is greater than the third resistivity.