The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Dec. 14, 2012
Xinyu Fu, Pleasanton, CA (US);
Wei Tang, Santa Clara, CA (US);
Kavita Shah, Mountain View, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
San H. Yu, Cupertino, CA (US);
Avgerinos Gelatos, Redwood City, CA (US);
Xinyu Fu, Pleasanton, CA (US);
Wei Tang, Santa Clara, CA (US);
Kavita Shah, Mountain View, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
San H. Yu, Cupertino, CA (US);
Avgerinos Gelatos, Redwood City, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for annealing a contact metal layer for a metal silicidation process are provided in the present invention. In one embodiment, a method for annealing a contact metal layer for a silicidation process in a semiconductor device includes providing a substrate having a contact metal layer disposed thereon in a thermal annealing processing chamber, providing a heat energy to the contact metal layer in the thermal processing chamber, supplying a gas mixture including a nitrogen gas and a hydrogen gas while providing the heat energy to the contact layer in the thermal processing chamber, wherein the nitrogen gas and the hydrogen gas is supplied at a ratio between about 1:10 and about 1:1, and forming a metal silicide layer on the substrate.