The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Aug. 13, 2012
Hsiao-wen Zan, Hsinchu, TW;
Chuang-chuang Tsai, Hsinchu, TW;
Chun-cheng Yeh, Hsinchu, TW;
Liang-hao Chen, Hsinchu, TW;
Hsiao-Wen Zan, Hsinchu, TW;
Chuang-Chuang Tsai, Hsinchu, TW;
Chun-Cheng Yeh, Hsinchu, TW;
Liang-Hao Chen, Hsinchu, TW;
E Ink Holdings Inc., Hsinchu, TW;
Abstract
Disclosed herein is a method for manufacturing a metal-oxide thin film transistor. The method includes the steps of: (a1) forming a gate electrode on a substrate; (a2) forming a gate insulating layer over the gate electrode; (a3) forming a metal-oxide semiconductor layer having a channel region on the gate insulating layer; (a4) forming a source electrode and a drain electrode on the metal-oxide semiconductor layer, wherein the source electrode is spaced apart from the drain electrode by a gap exposing the channel region; (a5) forming a mobility-enhancing layer on the channel region, wherein the mobility-enhancing layer is not in contact with the source electrode and the drain electrode; and (a6) annealing the metal-oxide semiconductor layer and the mobility-enhancing layer in an environment at a temperature of about 200° C. to 350° C.