The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Feb. 25, 2013
Applicant:
Asahi Glass Company, Limited, Chiyoda-ku, JP;
Inventor:
Kazuyuki Hayashi, Chiyoda-ku, JP;
Assignee:
Asahi Glass Company, Limited, Chiyoda-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/22 (2012.01); G03F 1/54 (2012.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01); G03F 1/54 (2013.01);
Abstract
To provide a reflective mask blank for EUV lithography having an absorber layer having optical constants suitable for reducing the thickness. A mask blank for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta) and palladium (Pd), and in the absorber layer, the content of tantalum (Ta) is from 10 to 80 at %, the content of palladium (Pd) is from 20 to 90 at %, and the total content of Ta and Pd is from 95 to 100 at %.