The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2015

Filed:

May. 11, 2012
Applicant:

Masaki Mikami, Tokyo, JP;

Inventor:

Masaki Mikami, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G02B 5/08 (2006.01); C23C 16/40 (2006.01); G03F 7/20 (2006.01); B82Y 40/00 (2011.01); B82Y 10/00 (2011.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01); G03F 7/70958 (2013.01); B82Y 40/00 (2013.01); B82Y 10/00 (2013.01); G21K 2201/061 (2013.01); G02B 5/0891 (2013.01);
Abstract

There are provided an EUV optical member, in which deterioration in the reflectivity due to oxidation of the Ru protective layer is prevented, a functional film-equipped substrate to be employed for production of the EUV optical member, and a process for producing the functional film-equipped substrate. A reflective layer-equipped substrate for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer, formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, and an intermediate layer containing from 0.5 to 20 at % of oxygen and from 80 to 99.5 at % of Si is formed between the reflective layer and the protective layer.


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