The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2015

Filed:

Feb. 27, 2013
Applicants:

National Taiwan University, Taipei, TW;

National Taiwan Normal University, Taipei, TW;

Inventors:

Chun-wei Chen, Taipei, TW;

Chia-chun Chen, Taipei, TW;

Di-yan Wang, Taipei, TW;

I-sheng Huang, Taipei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23F 3/06 (2006.01); B32B 38/10 (2006.01); B32B 37/00 (2006.01); C01B 31/00 (2006.01);
U.S. Cl.
CPC ...
B32B 38/10 (2013.01); B32B 37/025 (2013.01); C01B 31/00 (2013.01); B32B 2311/00 (2013.01); B32B 2313/04 (2013.01); B32B 2457/14 (2013.01);
Abstract

The present invention discloses a method for transferring a graphene layer. The graphene layer formed on a metal carrier layer is electrostatically adsorbed on a substrate by electrostatic charges, and then the substrate having the graphene layer formed on the metal carrier layer is immersed in an etching solution to remove the metal carrier layer, thereby completing the transfer of the graphene layer. In addition to being able to provide a simple method for transferring the graphene layer, the present invention further solves a problem of retaining organic residues, thus enhancing electrical properties of the transferred graphene layer.


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