The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Feb. 27, 2008
Akinori Koukitu, Fuchu, JP;
Yoshinao Kumagai, Fuchu, JP;
Toru Nagashima, Shunan, JP;
Kazuya Takada, Shunan, JP;
Hiroyuki Yanagi, Shunan, JP;
Akinori Koukitu, Fuchu, JP;
Yoshinao Kumagai, Fuchu, JP;
Toru Nagashima, Shunan, JP;
Kazuya Takada, Shunan, JP;
Hiroyuki Yanagi, Shunan, JP;
Tokuyama Corporation, Yamaguchi, JP;
Tokyo University of Agriculture and Technology, Tokyo, KE;
Abstract
There is provided a method capable of obtaining an aluminum-based group III nitride crystal layer having a smooth surface and high crystallinity by employing only HVPE in which inexpensive raw materials can be used to reduce production costs and high-speed film formation is possible without employing MOVPE. To produce a group III nitride crystal by HVPE comprising the step of growing a group III nitride crystal layer by vapor-phase growth on a single crystal substrate by contacting the heated single crystal substrate with a raw material gas containing a group III halide and a compound having a nitrogen atom, the group III nitride crystal is grown by vapor-phase growth on the single crystal substrate heated at a temperature of 1,000° C. or more and less than 1,200° C. to form an intermediate layer and then, a group III nitride crystal is further grown by vapor-phase growth on the intermediate layer on the substrate heated at a temperature of 1,200° C. or higher.