The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2014

Filed:

Apr. 09, 2008
Applicants:

Hidetoshi Oishi, Kanagawa, JP;

Mikio Oka, Kanagawa, JP;

Inventors:

Hidetoshi Oishi, Kanagawa, JP;

Mikio Oka, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G03F 1/36 (2012.01); G03F 7/20 (2006.01); G03F 1/00 (2012.01);
U.S. Cl.
CPC ...
G03F 1/144 (2013.01); G03F 1/36 (2013.01); G03F 7/705 (2013.01);
Abstract

A mask pattern design method includes: dividing design layout data for a pattern into multiple regions and extracting any region wherein transfer dimensions obtained from a transfer simulation of the pattern from the plurality of regions exceeds a predetermined allowance range; setting a process window of which multiple transfer conditions of the pattern data from the region extracted by the process are each changed, and computing transfer dimensions obtained from a transfer simulation with each transfer condition with the process window; and extracting the transfer conditions wherein the transfer dimension obtained from the transfer simulation with each transfer condition with the process window exceeds a predetermined allowance range, and computing yield from an occurrence probability regarding the transfer condition.


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