The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Nov. 05, 2013
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Hans-Joachim Schulze, Taufkirchen, DE;
Helmut Strack, Munich, DE;
Hans-Joerg Timme, Ottobrunn, DE;
Rainer Winkler, Zorneding, DE;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/263 (2006.01); C30B 29/06 (2006.01); H01L 29/04 (2006.01); C30B 33/02 (2006.01); H01L 21/322 (2006.01); C30B 25/18 (2006.01);
U.S. Cl.
CPC ...
H01L 29/04 (2013.01); H01L 21/02381 (2013.01); H01L 21/263 (2013.01); C30B 29/06 (2013.01); H01L 21/02532 (2013.01); C30B 33/02 (2013.01); H01L 21/02543 (2013.01); H01L 21/3225 (2013.01); H01L 29/0657 (2013.01); H01L 21/02546 (2013.01); C30B 25/18 (2013.01); H01L 21/02658 (2013.01); H01L 21/02529 (2013.01);
Abstract
A method for producing a semiconductor layer is disclosed. One embodiment provides for a semiconductor layer on a semiconductor substrate containing oxygen. Crystal defects are produced at least in a near-surface region of the semiconductor substrate. A thermal process is carried out wherein the oxygen is taken up at the crystal defects. The semiconductor layer is deposited epitaxially over the near-surface region of the semiconductor substrate.