The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Jan. 10, 2012
Chi-feng Huang, Zhubei, TW;
Chia-chung Chen, Keelung, TW;
Victor Chiang Liang, Hsinchu, TW;
Hsiao-chun Lee, Chiayi, TW;
Chi-Feng Huang, Zhubei, TW;
Chia-Chung Chen, Keelung, TW;
Victor Chiang Liang, Hsinchu, TW;
Hsiao-Chun Lee, Chiayi, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
An isolation structure in a semiconductor device absorbs electronic noise and prevents substrate leakage currents from reaching other devices and signals. The isolation structure provides a duality of deep N-well ('DNW') isolation structures surrounding an RF device or other source of electronic noise. The DNW isolation structures extend into the substrate at a depth of at least about 2.5 μm and may be coupled to V. P+ guard rings are also provided in some embodiments and are provided inside, outside or between the dual DNW isolation structures.