The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2014

Filed:

Aug. 22, 2013
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Thoralf Kautzsch, Dresden, DE;

Stefan Kolb, Unterschleissheim, DE;

Boris Binder, Dresden, DE;

Bernd Foeste, Dresden, DE;

Marco Mueller, Pirna, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01); H01L 21/00 (2006.01); H01L 21/311 (2006.01); B81C 1/00 (2006.01); G01L 9/00 (2006.01); B81B 3/00 (2006.01); G01L 19/06 (2006.01); H04R 31/00 (2006.01); H04R 19/00 (2006.01); H04R 19/04 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0021 (2013.01); B81C 1/00158 (2013.01); G01L 9/0045 (2013.01); H04R 31/00 (2013.01); H01L 29/84 (2013.01); H04R 19/005 (2013.01); G01L 19/0636 (2013.01); H04R 19/04 (2013.01);
Abstract

A method for providing a semiconductor structure includes forming a sacrificial structure by etching a plurality of trenches from a first main surface of a substrate. The method further includes covering the plurality of trenches at the first main surface with a cover material to define cavities within the substrate, removing a part of the substrate from a second main surface opposite to the first main surface to a depth at which the plurality of trenches are present, and etching away the sacrificial structure from the second main surface of the substrate.


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