The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Aug. 24, 2011
Chih-chung Wang, Hsinchu, TW;
Wei-lun Hsu, Hsin-Chu Hsien, TW;
Shan-shi Huang, Hsinchu, TW;
Ke-feng Lin, Taipei, TW;
Te-yuan Wu, Hsinchu, TW;
Chih-Chung Wang, Hsinchu, TW;
Wei-Lun Hsu, Hsin-Chu Hsien, TW;
Shan-Shi Huang, Hsinchu, TW;
Ke-Feng Lin, Taipei, TW;
Te-Yuan Wu, Hsinchu, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
The present invention provides a high voltage metal-oxide-semiconductor transistor device including a substrate, a deep well, and a doped region. The substrate and the doped region have a first conductive type, and the substrate has at least one electric field concentration region. The deep well has a second conductive type different from the first conductive type. The deep well is disposed in the substrate, and the doped region is disposed in the deep well. The doping concentrations of the doped region and the deep well in the electric field have a first ratio, and the doping concentrations of the doped region and the deep well outside the electric field have a second ratio. The first ratio is greater than the second ratio.