The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Dec. 29, 2011
Applicants:
Sung-nien Tang, Hsinchu County, TW;
Sheng-hsiong Yang, Hsin-Chu, TW;
Inventors:
Sung-Nien Tang, Hsinchu County, TW;
Sheng-Hsiong Yang, Hsin-Chu, TW;
Assignee:
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 29/1037 (2013.01); H01L 29/66704 (2013.01); H01L 29/0634 (2013.01); H01L 29/0653 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/404 (2013.01);
Abstract
An ultra high voltage MOS transistor device includes a substrate having a first conductivity type and a first recess formed thereon, a gate positioned on the first recess, and a pair of source region and drain region having a second conductivity type formed in two sides of the gate, respectively.